Title :
InAlAs/InGaAs/InP-HEMT technologies for high yield analog/digital ICs
Author :
Umeda, Y. ; Enoki, T. ; Osafune, K. ; Ito, H. ; Ishii, Y.
Author_Institution :
NTT LSI Labs., Kanagawa, Japan
Abstract :
High-yield and high-performance digital/analog ICs have been fabricated using the same InAlAs/InGaAs/InP-HEMT process. SCFL static frequency dividers show a fabrication yield of 63% and operate at 36.7/spl plusmn/0.55 GHz. Two-stage MMIC LNAs show a yield of 75% and at 62 GHz a noise figure of 4.3/spl plusmn/0.19 dB and a gain of 11.8/spl plusmn/0.25 dB.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; aluminium compounds; field effect MIMIC; field effect logic circuits; frequency dividers; gallium arsenide; indium compounds; integrated circuit technology; mixed analogue-digital integrated circuits; 11.8 dB; 36.7 GHz; 4.3 dB; 62 GHz; EHF; HEMT technologies; InAlAs-InGaAs-InP; MIMIC; SCFL static frequency dividers; fabrication yield; high yield analog/digital ICs; two-stage MMIC LNAs; Circuit testing; Fabrication; Frequency conversion; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MMICs; MODFETs; Threshold voltage;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1996. Digest of Papers., IEEE 1996
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3360-8
DOI :
10.1109/MCS.1996.506316
