An investigation of IM3 distortion in relation to bypass capacitor of GaAs MMIC´s

Author

Kawasaki, H. ; Ohgihara, T. ; Murakami, Yasutaka

Author_Institution

Semicond. Co., Sony Corp., Atsugi, Japan

fYear

1996

fDate

17-19 June 1996

Firstpage

119

Lastpage

122

Abstract

IM3 distortion in relation to a bypass capacitor of a GaAs MMIC has been investigated. Through non-linear simulation and the measurement of a 1-stage MMIC amplifier, it was shown that only IM3 performance depended on the bypass capacitor. A new analytical model of IF amplitude modulation for the 2-tone RF carrier outputs is proposed. Based upon this model, the RF carrier outputs were distorted from the amplitude modulation by IF of the 2-tone carriers when the output matching circuit was of high impedance at the IF.

Keywords

III-V semiconductors; MMIC amplifiers; amplitude modulation; capacitors; gallium arsenide; intermediate-frequency amplifiers; intermodulation distortion; GaAs; GaAs MMIC; IF amplitude modulation; IM3 distortion; analytical model; bypass capacitor; nonlinear simulation; one-stage MMIC amplifier; two-tone RF carrier outputs; Amplitude modulation; Analytical models; Capacitors; Distortion measurement; Gallium arsenide; Impedance matching; MMICs; Nonlinear distortion; Radio frequency; Radiofrequency amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1996. Digest of Papers., IEEE 1996

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-3360-8

Type

conf

DOI

10.1109/MCS.1996.506317

Filename

506317