DocumentCode
1916417
Title
A novel MMIC source impedance tuner for on-wafer microwave noise parameter measurements
Author
Collins, C.E. ; Pollard, R.D. ; Miles, R.E.
Author_Institution
Dept. of Electron. & Electr. Eng., Leeds Univ., UK
fYear
1996
fDate
17-19 June 1996
Firstpage
123
Lastpage
126
Abstract
A novel GaAs HEMT MMIC source impedance tuner is reported which can be incorporated into a wafer probe tip. This eliminates the effect of cable and probe losses on reflection coefficient, which enables higher magnitudes to be synthesized at the test device input than for conventional tuners, potentially increasing noise parameter measurement accuracy.
Keywords
HEMT integrated circuits; III-V semiconductors; electric noise measurement; field effect MMIC; gallium arsenide; integrated circuit measurement; microwave measurement; probes; GaAs; HEMT circuits; MMIC; measurement accuracy; microwave measurement; noise parameter measurement; on-wafer measurements; reflection coefficient; source impedance tuner; test device input; wafer probe tip; Acoustic reflection; Gallium arsenide; HEMTs; Impedance; Loss measurement; MMICs; Microwave devices; Probes; Testing; Tuners;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1996. Digest of Papers., IEEE 1996
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-3360-8
Type
conf
DOI
10.1109/MCS.1996.506318
Filename
506318
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