Title :
Status of InP HEMT technology for microwave receiver applications
Author_Institution :
Sanders Associates Inc., Nashua, NH, USA
Abstract :
The current status of InP-based high electron mobility transistor (HEMT) technology for low noise amplification at frequencies up to more than 100 GHz is presented. Following a review of recent advances industry-wide in both device and circuit performance, two issues which will pace the rate at which this new technology can be inserted into microwave systems-material/process maturity and long-term reliability-are discussed.
Keywords :
HEMT circuits; III-V semiconductors; circuit reliability; indium compounds; microwave circuits; microwave receivers; millimetre wave circuits; millimetre wave receivers; semiconductor device reliability; 20 to 100 GHz; HEMT technology; InP; circuit performance; long-term reliability; low noise amplification; material/process maturity; microwave receiver applications; microwave systems; Frequency; HEMTs; Indium gallium arsenide; Indium phosphide; Microwave technology; Millimeter wave circuits; Millimeter wave technology; Millimeter wave transistors; Noise figure; PHEMTs;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1996. Digest of Papers., IEEE 1996
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3360-8
DOI :
10.1109/MCS.1996.506319
