Title :
A direct-conversion UWB RF front-end for MB-OFDM application
Author :
Lo, Yu-Tsung ; Kiang, Jean-Fu
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
An ultra-wideband (UWB) RF front-end is designed and implemented in 0.18 mum CMOS process. The measured noise figure of the LNA chip is 2.5-3.9 dB, S21 is above 9.6 dB from 3.1 to 10.3 GHz at the power consumption of 13.4 mW. The simulated conversion gain of the RF front-end is 19 dB with gain variation of less than 1 dB. The IIP3 is -20 dBm, P1dB is -27.25 dBm at 6 GHz, and the total power consumption of the RF front-end is 24 mW.
Keywords :
CMOS integrated circuits; OFDM modulation; ultra wideband communication; CMOS process; LNA chip; MB-OFDM application; direct-conversion UWB RF front-end; frequency 3.1 GHz to 10.3 GHz; frequency 6 GHz; noise figure; power 13.4 mW; power 24 mW; power consumption; size 0.18 mum; Energy consumption; Impedance matching; Interference; Noise figure; Noise measurement; OFDM; Power engineering and energy; RAKE receivers; Radio frequency; Ultra wideband technology;
Conference_Titel :
Ultra-Wideband, 2009. ICUWB 2009. IEEE International Conference on
Conference_Location :
Vancouver, BC
Print_ISBN :
978-1-4244-2930-1
Electronic_ISBN :
978-1-4244-2931-8
DOI :
10.1109/ICUWB.2009.5288677
