• DocumentCode
    1916500
  • Title

    Fabrication process of wobble motors with polysilicon anchoring bearing

  • Author

    Chenjie, Chee ; Litian, Liu ; Zhimin, Tan ; Huikai, Xie ; Zhijian, Li

  • Author_Institution
    Inst. of Microelectron., Tsinghua Univ., Beijing, China
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    92
  • Lastpage
    95
  • Abstract
    A simple fabrication process of wobble motors with a bearing anchored on a substrate by polysilicon has been developed. This process makes use of two LPCVD polysilicons, two LPCVD sacrificial layers SiO 2 and four photolithography steps. The rotor, stators and rotor/stator gap pattern definition is the first photolithography step and is performed over a flat surface. The rotor is in electrically contacts with the silicon substrate through the bearing. The rotor and the substrate is at the same electric potential, therefore rotor clamped is eliminated. The polysilicon which anchors the flange of micromotor is used stead of the SiO2, the over etch time does not affect flange anchored on the substrate during release motor. The time releasing the motor is easily controlled. For 2.5 μm-thick rotor/stater polysilicon films, minimum starting voltage 45 V, minimum operating voltage 25 V across 2.2 μm rotor/stater gaps; maximum rotate velocity of the motor is 600 rpm, and varied with the exciting frequency continually
  • Keywords
    CVD coatings; elemental semiconductors; micromachining; micromotors; photolithography; semiconductor thin films; silicon; 2.2 mum; 2.5 mum; 45 V; LPCVD polysilicons; LPCVD sacrificial layers SiO2; Si; fabrication process; flat surface; over etch time; photolithography steps; polysilicon anchoring bearing; rotor; rotor/stator gap pattern definition; stators; wobble motors; Contacts; Electric potential; Fabrication; Flanges; Lithography; Micromotors; Rotors; Silicon; Stators; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1999. Proceedings. 1999 IEEE Hong Kong
  • Conference_Location
    Shatin
  • Print_ISBN
    0-7803-5648-9
  • Type

    conf

  • DOI
    10.1109/HKEDM.1999.836416
  • Filename
    836416