Title :
A 60 GHz-band low noise HJFET amplifier module for wireless LAN applications
Author :
Maruhashi, K. ; Funabashi, M. ; Inoue, T. ; Madihian, M. ; Kuzuhara, M.
Author_Institution :
Kansai Electron. Res. Lab., NEC Corp., Shiga, Japan
Abstract :
A 60 GHz-band low noise amplifier (LNA) module has been developed based on 0.15 /spl mu/m AlGaAs/InGaAs heterojunction FET(HJFET) technologies. A two-stage MMIC amplifier was designed and fabricated, which exhibited a noise figure less than 3 dB with a gain higher than 10 dB over 59.5 to 61.5 GHz range. For the module fabrication, two MMIC chips were mounted in a WR-15 waveguide housing. The four-stage amplifier module demonstrated a noise figure of 4 dB and a gain higher than 24 dB from 59 to 60 GHz. To our knowledge, this is the best reported noise figure including a microstrip-to-waveguide transition loss, using GaAs-based MMICs operating at this frequency range. The measured output power for the module at 1 dB gain compression point was 4 dBm. Temperature test from -20 to 70/spl deg/C revealed very small noise figure and gain variations of 0.35 dB and 0.62 dB, respectively.
Keywords :
III-V semiconductors; aluminium compounds; field effect MIMIC; gallium arsenide; indium compounds; integrated circuit measurement; integrated circuit noise; millimetre wave amplifiers; wireless LAN; -20 to 70 degC; 0.15 micron; 4 dB; 59.5 to 61.5 GHz; AlGaAs-InGaAs; HJFET amplifier module; WR-15 waveguide housing; gain compression point; gain variations; heterojunction FET; low noise amplifier; output power; temperature test; two-stage MMIC amplifier; wireless LAN applications; Frequency; Gain; Heterojunctions; Indium gallium arsenide; Low-noise amplifiers; MMICs; Microstrip; Noise figure; Optical device fabrication; Wireless LAN;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1996. Digest of Papers., IEEE 1996
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3360-8
DOI :
10.1109/MCS.1996.506321
