Carrier lifetime recombination measurement by conductivity modulation for power p-i-n diode

Author

Oussalah, S. ; Jerisian, R.

Author_Institution

Lab. de Microelectron. de Puissance, Univ. Francois Rabelais of Tours, France

fYear

1999

fDate

1999

Firstpage

106

Lastpage

109

Abstract

A simple and rapid method for determining the minority-carrier recombination lifetime τ in the base of a power p-i-n diode is described. This method is based on the measurement of the basewidth conductivity modulation of junction diode, biased in the forward direction. The exploitation of the conductance-voltage characteristic allows to extract τ. This method will be implanted in the parametric test system (industrial equipment), the goal of which is to follow the parameter evolution of the ASD2^TM (Application Specific Discrete) process basic devices. To illustrate the method, it is compared to the reverse recovery methods

Keywords

carrier lifetime; electron-hole recombination; minority carriers; p-i-n diodes; power semiconductor diodes; semiconductor device testing; ASD2 process basic devices; basewidth conductivity modulation; carrier lifetime recombination measurement; conductance-voltage characteristic; forward direction bias; junction diode; minority-carrier; parameter evolution; parametric test system; power p-i-n diode; Charge carrier lifetime; Conductivity measurement; Electrical equipment industry; Fabrication; Instruments; P-i-n diodes; Power measurement; System testing; Variable speed drives; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1999. Proceedings. 1999 IEEE Hong Kong

Conference_Location

Shatin

Print_ISBN

0-7803-5648-9

Type

conf

DOI

10.1109/HKEDM.1999.836419

Filename

836419