Title :
Calculation of junction temperature in heterojunction bipolar transistors
Author :
Chang, Yang-Hua ; Wu, Ying-Yih ; Lu, J.-M.
Author_Institution :
Nat. Yunlin Univ. of Sci. & Technol., Taiwan
Abstract :
A technique to calculate junction temperature of heterojunction bipolar transistors is presented. By measurement of IC as a function of VBE at only a few substrate temperatures, junction temperature can be derived. Measured results are shown with a multi-finger AlGaAs/GaAs transistor
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; semiconductor device models; AlGaAs; GaAs; heterojunction bipolar transistors; junction temperature; multi-finger AlGaAs/GaAs transistor; substrate temperatures; Current measurement; Electrical resistance measurement; Fingers; Gallium arsenide; Heterojunction bipolar transistors; Silicon; Temperature dependence; Temperature measurement; Thermal conductivity; Thermal resistance;
Conference_Titel :
Electron Devices Meeting, 1999. Proceedings. 1999 IEEE Hong Kong
Conference_Location :
Shatin
Print_ISBN :
0-7803-5648-9
DOI :
10.1109/HKEDM.1999.836420
