DocumentCode
1916660
Title
Fully-matched, high-efficiency Q-band 1 watt MMIC solid state power amplifier
Author
Hwang, Y. ; Chow, P.D. ; Lester, J. ; Chi, J. ; Garske, D. ; Biedenbender, M. ; Lai, R.
Author_Institution
TRW Electron. Syst. & Technol. Div., Redondo Beach, CA, USA
fYear
1996
fDate
17-19 June 1996
Firstpage
167
Lastpage
170
Abstract
A fully-matched, high-efficiency Q-band 1 watt MMIC power amplifier has been developed. This chip utilized 2 mil-thick GaAs substrate to improve amplifier gain, power added efficiency and heat dissipation. 1 watt output power and 30% efficiency was achieved at 44 GHz.
Keywords
HEMT integrated circuits; MMIC power amplifiers; field effect MIMIC; impedance matching; millimetre wave amplifiers; power amplifiers; 1 W; 30 percent; 44 GHz; EHF; GaAs; GaAs substrate; HEMT process; MMIC power amplifier; Q-band; fully-matched configuration; high-efficiency operation; solid state power amplifier; Circuit simulation; Frequency; Gallium arsenide; HEMTs; High power amplifiers; MMICs; Power amplifiers; Power generation; Semiconductor device measurement; Solid state circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1996. Digest of Papers., IEEE 1996
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-3360-8
Type
conf
DOI
10.1109/MCS.1996.506328
Filename
506328
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