Study of 1/f noise in III-V nitride based MODFETs at low drain bias

Author

Ho, Wing Fat ; Tong, K.Y.

Author_Institution

Dept. of Electron. Eng., Hong Kong Polytech. Univ., Kowloon

fYear

1999

fDate

1999

Firstpage

130

Lastpage

133

Abstract

Flicker noise in MBE grown III-V nitride MODFETs was characterized from room temperature to 130 K. The voltage noise power spectra, S_v(f), were found to be proportional to 1/f^γ where γ depends on the device temperature as well as the gate bias. Study of S_v(f) as a function of the biasing condition was conducted in detail and were found to vary as V_G²/(V_G-V_T)^β where β is a function of temperature. Analyses of the data showed that the noise originated from thermal activation of carriers to localized states in the channel area. The experimental data indicated that number fluctuations was not a major factor in the observed noise. However, more work is needed to determine if surface mobility fluctuations played a key role in the 1/f noise

Keywords

1/f noise; III-V semiconductors; carrier mobility; current fluctuations; flicker noise; high electron mobility transistors; semiconductor device noise; wide band gap semiconductors; 1/f noise; 300 to 130 K; AlGaN; GaN; III-V nitride based MODFETs; MBE grown III-V nitride; biasing condition; device temperature; flicker noise; gate bias; localized states; low drain bias; number fluctuations; room temperature; surface mobility fluctuations; thermal activation of carriers; voltage noise power spectra; 1f noise; Electrons; Frequency; Gallium nitride; HEMTs; III-V semiconductor materials; MODFETs; Temperature distribution; Temperature sensors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1999. Proceedings. 1999 IEEE Hong Kong

Conference_Location

Shatin

Print_ISBN

0-7803-5648-9

Type

conf

DOI

10.1109/HKEDM.1999.836424

Filename

836424