Title :
A physical analytical model for LT-GaAs and LT-Al0.3Ga 0.7As MISFET devices
Author :
Rao, R.V.V.V.J. ; Chong, T.C. ; Tan, L.S. ; Lau, W.S. ; Liou, J.J.
Author_Institution :
Centre for Wireless Commun., Singapore
Abstract :
An accurate physical analytical model has been described for output current-voltage characteristics and for describing the behavior of electron in LT-GaAs and LT-Al0.3Ga0.7As MISFET devices. The model is derived from basic semiconductor charge analysis. In this model, the Chang-Fetterman equation is used to approximate the electron drift velocity versus electric field. Excellent agreement with experimental results is shown
Keywords :
III-V semiconductors; MISFET; aluminium compounds; gallium arsenide; semiconductor device models; Al0.3Ga0.7As; Chang-Fetterman equation; GaAs; LT-Al0.3Ga0.7As; LT-GaAs; MISFET devices; basic semiconductor charge analysis; electric field; electron drift velocity; output current-voltage characteristics; physical analytical model; Electron mobility; Gallium arsenide; Insulation; Low-frequency noise; MISFETs; Molecular beam epitaxial growth; Power amplifiers; Semiconductor process modeling; Thermal stability; Thermal stresses;
Conference_Titel :
Electron Devices Meeting, 1999. Proceedings. 1999 IEEE Hong Kong
Conference_Location :
Shatin
Print_ISBN :
0-7803-5648-9
DOI :
10.1109/HKEDM.1999.836425
