Title :
Highly efficient compact Q-band MMIC power amplifier using 2-mil substrate and partially-matched output
Author :
Lester, J.A. ; Hwang, Y. ; Chi, J. ; Lai, R. ; Biedenbender, M. ; Chow, P.D.
Author_Institution :
TRW Electron. Syst. & Technol. Div., Redondo Beach, CA, USA
Abstract :
Presented is an 850 mW Q-band PHEMT MMIC power amplifier with a peak efficiency of 34% at 45.5 GHz, believed to be the highest reported at this power level and frequency. The compact amplifier (3.6 mm by 1.6 mm) features the use of a thinned 2-mil GaAs substrate and off-chip output matching and combining on a 5-mil alumina substrate.
Keywords :
HEMT integrated circuits; MMIC power amplifiers; field effect MIMIC; gallium arsenide; impedance matching; millimetre wave amplifiers; power amplifiers; 1.6 mm; 2 mil; 3.6 mm; 34 percent; 45.5 GHz; 5 mil; 850 mW; Al/sub 2/O/sub 3/; EHF; GaAs; PHEMT MMIC power amplifier; Q-band; alumina substrate; compact amplifier; offchip output matching; output combining; partially-matched output; pseudomorphic HEMT; thinned GaAs substrate; HEMTs; High power amplifiers; Impedance matching; MMICs; PHEMTs; Parasitic capacitance; Phased arrays; Power amplifiers; Substrates; Thermal resistance;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1996. Digest of Papers., IEEE 1996
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3360-8
DOI :
10.1109/MCS.1996.506329
