GaAs power MESFET´s fabricated by ion implantation technology for 2.4-GHz wireless LAN applications

Author

Lai, Yeong-Lin ; Chang, Edward Y. ; Chang, C.Y. ; Liu, Don-Gey ; Her, Man-Long ; Miin-Shyue Shiau ; Yang, Shui-Yuan ; Chuang, K.C.

Author_Institution

Dept. of Electron. Eng., Feng Chia Univ., Taichung, Taiwan

fYear

1999

fDate

1999

Firstpage

144

Lastpage

147

Abstract

In this paper, we present GaAs power MESFETs fabricated by the ion implantation technology for 2.4-GHz wireless communication applications. The MESFET exhibited a saturation drain current of 850 mA and a maximum transconductance of 145 mS/mm. The 3.36-mm-wide MESFET operating at 2.4 GHz demonstrated an output power of 24.7 dBm and a power-added efficiency of 56.4% at a low drain voltage of 2.5 V

Keywords

III-V semiconductors; gallium arsenide; ion implantation; power MESFET; semiconductor doping; wireless LAN; 2.4 GHz; 2.5 V; 56.4 percent; 850 mA; GaAs; GaAs power MESFET; ion implantation technology; low drain voltage; maximum transconductance; output power; power-added efficiency; saturation drain current; wireless LAN applications; wireless communication; Gallium arsenide; HEMTs; Ion implantation; MESFETs; MODFETs; Materials science and technology; Power engineering and energy; Rapid thermal annealing; Wireless LAN; Wireless communication;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1999. Proceedings. 1999 IEEE Hong Kong

Conference_Location

Shatin

Print_ISBN

0-7803-5648-9

Type

conf

DOI

10.1109/HKEDM.1999.836427

Filename

836427