Title :
GaAs power MESFET´s fabricated by ion implantation technology for 2.4-GHz wireless LAN applications
Author :
Lai, Yeong-Lin ; Chang, Edward Y. ; Chang, C.Y. ; Liu, Don-Gey ; Her, Man-Long ; Miin-Shyue Shiau ; Yang, Shui-Yuan ; Chuang, K.C.
Author_Institution :
Dept. of Electron. Eng., Feng Chia Univ., Taichung, Taiwan
Abstract :
In this paper, we present GaAs power MESFETs fabricated by the ion implantation technology for 2.4-GHz wireless communication applications. The MESFET exhibited a saturation drain current of 850 mA and a maximum transconductance of 145 mS/mm. The 3.36-mm-wide MESFET operating at 2.4 GHz demonstrated an output power of 24.7 dBm and a power-added efficiency of 56.4% at a low drain voltage of 2.5 V
Keywords :
III-V semiconductors; gallium arsenide; ion implantation; power MESFET; semiconductor doping; wireless LAN; 2.4 GHz; 2.5 V; 56.4 percent; 850 mA; GaAs; GaAs power MESFET; ion implantation technology; low drain voltage; maximum transconductance; output power; power-added efficiency; saturation drain current; wireless LAN applications; wireless communication; Gallium arsenide; HEMTs; Ion implantation; MESFETs; MODFETs; Materials science and technology; Power engineering and energy; Rapid thermal annealing; Wireless LAN; Wireless communication;
Conference_Titel :
Electron Devices Meeting, 1999. Proceedings. 1999 IEEE Hong Kong
Conference_Location :
Shatin
Print_ISBN :
0-7803-5648-9
DOI :
10.1109/HKEDM.1999.836427
