Title :
The Impact of SiGe BiCMOS Technology on Microwave Circuits and Systems
Author_Institution :
IBM T.J. Watson Research Center, Yorktown Heigths, USA
fDate :
11-13 September 2000
Keywords :
BiCMOS integrated circuits; Circuits and systems; Dielectrics; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Inductors; Microwave technology; Silicon germanium; Voltage;
Conference_Titel :
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN :
2-86332-248-6
DOI :
10.1109/ESSDERC.2000.194715
