Title :
A Direct-Conversion RF Front-End in a 65-nm CMOS
Author :
Kaukovuori, J. ; Ryynänen, J. ; Halonen, K.A.I.
Author_Institution :
Electron. Circuit Design Lab., Helsinki Univ. of Technol., HUT
Abstract :
A 2.4-GHz direct-conversion RF front-end designed in a 65-nm CMOS process is described in this paper. The front-end includes an LNA, folded quadrature mixers, a local oscillator (LO) divider, and LO buffers. The front-end consumes 29.3 mA from a 1.2-V power supply and according to simulations it achieves 39-dB voltage gain, 1.5-dB minimum spot noise figure, and -17-dBm IIP3
Keywords :
CMOS integrated circuits; UHF integrated circuits; buffer circuits; frequency dividers; low noise amplifiers; mixers (circuits); 1.2 V; 2.4 GHz; 29.3 mA; 39 dB; 65 nm; CMOS process; LNA; direct-conversion; folded quadrature mixers; local oscillator buffers; local oscillator divider; low noise amplifier; radiofrequency front-end; CMOS process; CMOS technology; Capacitors; Inductors; Local oscillators; Low-noise amplifiers; Noise figure; Radio frequency; Silicon; Voltage;
Conference_Titel :
Norchip Conference, 2006. 24th
Conference_Location :
Linkoping
Print_ISBN :
1-4244-0772-9
DOI :
10.1109/NORCHP.2006.329218
