DocumentCode
1916802
Title
A Direct-Conversion RF Front-End in a 65-nm CMOS
Author
Kaukovuori, J. ; Ryynänen, J. ; Halonen, K.A.I.
Author_Institution
Electron. Circuit Design Lab., Helsinki Univ. of Technol., HUT
fYear
2006
fDate
Nov. 2006
Firstpage
235
Lastpage
238
Abstract
A 2.4-GHz direct-conversion RF front-end designed in a 65-nm CMOS process is described in this paper. The front-end includes an LNA, folded quadrature mixers, a local oscillator (LO) divider, and LO buffers. The front-end consumes 29.3 mA from a 1.2-V power supply and according to simulations it achieves 39-dB voltage gain, 1.5-dB minimum spot noise figure, and -17-dBm IIP3
Keywords
CMOS integrated circuits; UHF integrated circuits; buffer circuits; frequency dividers; low noise amplifiers; mixers (circuits); 1.2 V; 2.4 GHz; 29.3 mA; 39 dB; 65 nm; CMOS process; LNA; direct-conversion; folded quadrature mixers; local oscillator buffers; local oscillator divider; low noise amplifier; radiofrequency front-end; CMOS process; CMOS technology; Capacitors; Inductors; Local oscillators; Low-noise amplifiers; Noise figure; Radio frequency; Silicon; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Norchip Conference, 2006. 24th
Conference_Location
Linkoping
Print_ISBN
1-4244-0772-9
Type
conf
DOI
10.1109/NORCHP.2006.329218
Filename
4126989
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