DocumentCode
1916803
Title
Frequency translation MMICs using InP HEMT technology
Author
Tran, L. ; Delaney, M. ; Isobe, R. ; Jang, D. ; Brown, J.
Author_Institution
Hughes Space & Commun. Co., El Segundo, CA, USA
fYear
1996
fDate
17-19 June 1996
Firstpage
193
Lastpage
196
Abstract
Frequency translation circuits are key elements in communication systems. This paper presents three different frequency multipliers and a frequency mixer designed using the InP HEMT technology. These successful first iteration MMICs are highlighted by a V-band frequency quadrupler that has 14.25 dB conversion gain with +3.25 dBm output power and a V-band mixer that has 10 dB conversion loss over a 12 GHz bandwidth.
Keywords
HEMT integrated circuits; III-V semiconductors; MMIC frequency convertors; MMIC mixers; field effect MIMIC; field effect MMIC; frequency multipliers; indium compounds; millimetre wave frequency convertors; millimetre wave mixers; 10 dB; 12 GHz; 14.25 dB; EHF; InP; InP HEMT technology; Ka-band; MIMIC; MM-wave mixer; SHF; V-band frequency quadrupler; V-band mixer; frequency mixer; frequency multipliers; frequency translation MMICs; Circuits; Cutoff frequency; Frequency conversion; HEMTs; Indium phosphide; MMICs; Mixers; Noise figure; Power generation; Space technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1996. Digest of Papers., IEEE 1996
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-3360-8
Type
conf
DOI
10.1109/MCS.1996.506334
Filename
506334
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