Quantum well intermixing using argon plasma generated in a reactive-ion etching system on InGaAs/InGaAsP laser structures

Author

Leong, D. ; Djie, H.S. ; Ang, L.K.

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore

fYear

2002

fDate

2002

Firstpage

148

Lastpage

152

Abstract

Quantum-well intermixing using an argon plasma, generated by a reactive-ion etching system, is demonstrated on InGaAs/InGaAsP quantum well laser structures. The parameters of the process were optimised by using Taguchi´s method. Using an argon flowrate of 50 sccm, pressure of 30 mTorr and RF power of 480 W, a blue shift of 73 nm was obtained after exposure to the plasma for 5 minutes.

Keywords

III-V semiconductors; Taguchi methods; chemical interdiffusion; energy gap; gallium arsenide; indium compounds; photoluminescence; plasma materials processing; quantum well lasers; semiconductor quantum wells; spectral line shift; sputter etching; 30 mtorr; 480 W; 5 min; Ar; Ar flowrate; Ar plasma; InGaAs-InGaAsP; InGaAs/InGaAsP laser structures; PL spectra; RF power; Taguchi method; bandgap energy blue shift; process parameters optimisation; quantum-well intermixing; reactive-ion etching system; Annealing; Argon; Etching; Indium gallium arsenide; Photonic band gap; Plasma applications; Plasma properties; Plasma waves; Quantum well lasers; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Fibre and Optical Passive Components, 2002. Proceedings of 2002 IEEE/LEOS Workshop on

Print_ISBN

0-7803-7556-4

Type

conf

DOI

10.1109/FOPC.2002.1015818

Filename

1015818