DocumentCode :
1916833
Title :
Present Understanding of Gate Oxide Wearout
Author :
Rosenbaum, Elyse ; Wu, Jie
Author_Institution :
University of Illinois at Urbana-Champaign, USA
fYear :
2000
fDate :
11-13 September 2000
Firstpage :
54
Lastpage :
59
Keywords :
Anodes; Breakdown voltage; Cathodes; Charge carrier processes; Electric breakdown; Electron traps; Lead compounds; Leakage current; Testing; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN :
2-86332-248-6
Type :
conf
DOI :
10.1109/ESSDERC.2000.194717
Filename :
1503647
Link To Document :
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