Title :
Loss measurements in intermixed InGaAs/AlGaInAs multiple-quantum-well ridge waveguides
Author :
Bubke, Karsten ; Sorel, Marc ; Robert, Franck ; Bryce, A. Catrina ; Arnold, John M. ; Marsh, John H.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
Abstract :
A study of the losses in InGaAs/AlGaInAs multiple-quantum-well ridge waveguides band edge shifted by quantum well intermixing is presented. The intermixing process is based on point defects generated on the sample surface during the deposition of sputtered SiO2 and a subsequent rapid thermal annealing. It is demonstrated that for small wavelength shifts (60-80 nm), losses are considerably lower than in samples with maximum band edge shift (150 nm). Minimum losses of 6 dB/cm have been measured.
Keywords :
III-V semiconductors; aluminium compounds; chemical interdiffusion; gallium arsenide; indium compounds; integrated optics; optical losses; optical waveguides; quantum well devices; rapid thermal annealing; ridge waveguides; semiconductor quantum wells; InGaAs-AlGaInAs; SiO2; band edge shift; intermixed InGaAs/AlGaInAs multiple-quantum-well ridge waveguides; loss measurements; maximum band edge shift; minimum losses; photonic integrated circuits; point defects; quantum well intermixing; rapid thermal annealing; small wavelength shifts; sputtered SiO2 deposition; Indium gallium arsenide; Indium phosphide; Loss measurement; Optical losses; Photonic band gap; Quantum well devices; Rapid thermal annealing; Rapid thermal processing; Temperature; Wavelength measurement;
Conference_Titel :
Fibre and Optical Passive Components, 2002. Proceedings of 2002 IEEE/LEOS Workshop on
Print_ISBN :
0-7803-7556-4
DOI :
10.1109/FOPC.2002.1015819
