Title :
Monolithic integration of 2×2 crosspoint switches in InGaAs-InAlGaAs multiple quantum wells using quantum well intermixing
Author :
Qiu, B.C. ; Ternent, G. ; McDougall, S.D. ; Marsh, J.H.
Author_Institution :
Intense Photonics Ltd., High Blantyre, UK
Abstract :
We report 2×2 crosspoint switches, containing passive waveguides, MMI couplers, electro-absorption modulators and semiconductor optical amplifiers (SOA) integrated monolithically using the sputtered SiO2 quantum well intermixing technique. The switches can be lossless due to the gain compensation of the incorporated SOAs, and have extinction ratios up to 26 dB.
Keywords :
III-V semiconductors; aluminium compounds; chemical interdiffusion; electro-optical modulation; gallium arsenide; indium compounds; integrated optics; optical couplers; optical switches; packet switching; quantum well devices; semiconductor optical amplifiers; semiconductor quantum wells; 2×2 crosspoint switches; InGaAs-InAlGaAs; InGaAs-InAlGaAs MQW; MMI couplers; SiO2; electro-absorption modulators; extinction ratios; gain compensation; lossless switches; low-loss monolithic semiconductor packet switches; monolithic integration; passive waveguides; quantum well intermixing; semiconductor optical amplifiers; sputtered SiO2 quantum well intermixing technique; Absorption; Extinction ratio; Insertion loss; Monolithic integrated circuits; Optical losses; Optical switches; Optical waveguides; Photonic band gap; Semiconductor optical amplifiers; Semiconductor waveguides;
Conference_Titel :
Fibre and Optical Passive Components, 2002. Proceedings of 2002 IEEE/LEOS Workshop on
Print_ISBN :
0-7803-7556-4
DOI :
10.1109/FOPC.2002.1015821
