26 GHz coplanar SiGe MMICs

Author

Rheinfelder, C. ; Strohm, K. ; Beisswanger, F. ; Gerdes, J. ; Schmuckle, F.J. ; Luy, J.-F. ; Heinrich, W.

Author_Institution

Ferdinand-Braun-Inst. fur Hochstfrequenztechnik, Berlin, Germany

fYear

1996

fDate

17-19 June 1996

Firstpage

205

Lastpage

208

Abstract

First results on coplanar MMICs with SiGe HBTs are presented. The circuits are fabricated on high-resistivity Si substrates using a double-mesa HBT process. In the Ka-band, an oscillator output power of 1 dBm and 4.4 dB gain for a one-stage amplifier are achieved. This demonstrates the potential of SiGe transistors for applications in the higher microwave range.

Keywords

Ge-Si alloys; MMIC amplifiers; MMIC oscillators; bipolar MMIC; coplanar waveguides; heterojunction bipolar transistors; semiconductor materials; 26 GHz; 4.4 dB; Ka-band; SiGe; SiGe HBTs; circuit fabrication; coplanar MMICs; double-mesa process; high-resistivity Si substrates; microwave transistors; one-stage amplifier; oscillator; Circuits; Gain; Germanium silicon alloys; Heterojunction bipolar transistors; MMICs; Microwave oscillators; Microwave transistors; Power amplifiers; Power generation; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1996. Digest of Papers., IEEE 1996

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-3360-8

Type

conf

DOI

10.1109/MCS.1996.506337

Filename

506337

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1916890