DocumentCode :
1916962
Title :
Highly Uniform RTP Growth and Characterisation of Ultra-Thin Oxynitride Dielectrics Grown in N2O
Author :
Wrixon, Robert ; O´Sullivan, Paula ; Mathewson, Alan
Author_Institution :
National Microelectronics Research Centre, Lee Maltings, Prospect Row, Cork, Ireland
fYear :
1994
fDate :
11-15 Sept. 1994
Firstpage :
21
Lastpage :
24
Abstract :
This paper describes methods of improving thickness uniformity for ultra-thin oxynitride dielectrics fabricated using nitrous oxide (N2O). In addition the electrical characterisation of these dielectrics is presented in order to ascertain the effect that the different fabrication processes have on the electrical properties.
Keywords :
Design for quality; Dielectric devices; Electric variables; Ellipsometry; Fabrication; Furnaces; Geometry; Microelectronics; Nonvolatile memory; Rapid thermal processing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
Conference_Location :
Edinburgh, Scotland
Print_ISBN :
0863321579
Type :
conf
Filename :
5435660
Link To Document :
بازگشت