• DocumentCode
    1916962
  • Title

    Highly Uniform RTP Growth and Characterisation of Ultra-Thin Oxynitride Dielectrics Grown in N2O

  • Author

    Wrixon, Robert ; O´Sullivan, Paula ; Mathewson, Alan

  • Author_Institution
    National Microelectronics Research Centre, Lee Maltings, Prospect Row, Cork, Ireland
  • fYear
    1994
  • fDate
    11-15 Sept. 1994
  • Firstpage
    21
  • Lastpage
    24
  • Abstract
    This paper describes methods of improving thickness uniformity for ultra-thin oxynitride dielectrics fabricated using nitrous oxide (N2O). In addition the electrical characterisation of these dielectrics is presented in order to ascertain the effect that the different fabrication processes have on the electrical properties.
  • Keywords
    Design for quality; Dielectric devices; Electric variables; Ellipsometry; Fabrication; Furnaces; Geometry; Microelectronics; Nonvolatile memory; Rapid thermal processing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
  • Conference_Location
    Edinburgh, Scotland
  • Print_ISBN
    0863321579
  • Type

    conf

  • Filename
    5435660
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1916962