• DocumentCode
    1916982
  • Title

    Impact of the Furnace Nitridation Temperature in N2O Ambient on the Quality of the Si/SiO2 System

  • Author

    Vincent, E. ; Papadas, C. ; Riva, C. ; Pio, F. ; Ghibaudo, G.

  • Author_Institution
    SGS-Thomson Microelectronics, Central R&D, BP 16,38921 Crolles, France; Laboratoire de Physique des Composants Ã\xa0 Semiconducteurs/ENSERG, BP 257, 38047 Grenoble, France
  • fYear
    1994
  • fDate
    11-15 Sept. 1994
  • Firstpage
    25
  • Lastpage
    28
  • Abstract
    The impact of the furnace nitridation temperature on the quality of the Si/SiO2 system will be investigated. The analysis will be conducted in terms of bulk oxide trapping properties after Fowler-Nordheim injection, breakdown parameters and hot carrier endurance data. Finally, it will be demonstrated that a lower furnace nitridation temperature results to an insulator which exhibits similar reliability performance to that obtained after high temperature treatment, provided that the nitridation time has been properly adjusted.
  • Keywords
    Breakdown voltage; CMOS technology; Capacitors; Electric breakdown; Furnaces; Hot carriers; Insulation; Microelectronics; Stress; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
  • Conference_Location
    Edinburgh, Scotland
  • Print_ISBN
    0863321579
  • Type

    conf

  • Filename
    5435661
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1916982