Title :
A high efficiency complementary GaAs power FET technology for single supply portable applications
Author :
Glass, E. ; Abrokwah, J. ; Lucero, R. ; Spears, E. ; Rollman, J. ; Huang, J.-H. ; Bernhardt, B. ; Ooms, B.
Author_Institution :
Phoenix Corp. Res. Labs., Motorola Inc., Tempe, AZ, USA
Abstract :
A high efficiency enhancement mode power heterostructure FET has been developed for single supply portable applications. The device requires only a single 3 V supply for operation, making it an ideal candidate for portable applications. At 850 MHz, a 1.0 /spl mu/m/spl times/12 mm N-type FET exhibited a power output of +30.7 dBm, power gain of 10.6 dB, and a power-added efficiency of 60%, at a drain to source voltage of 3 V, and drain to source quiescent current of 150 mA. This device was fabricated on a standard Complementary GaAs (CGaAs) process flow, which is capable of simultaneously building low-voltage, low-power digital circuits (200 MHz), high-speed digital circuits (5 GHz), and RF power circuits (900 MHz).
Keywords :
III-V semiconductors; UHF field effect transistors; UHF integrated circuits; gallium arsenide; mobile radio; power field effect transistors; power integrated circuits; 10.6 dB; 150 mA; 200 MHz to 5 GHz; 3 V; 60 percent; 850 MHz; CGaAs process; GaAs; complementary GaAs power FET technology; enhancement mode HFET; high efficiency; power heterostructure FET; single supply portable applications; Digital circuits; FETs; Gallium arsenide; HEMTs; Laboratories; MESFETs; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Threshold voltage;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1996. Digest of Papers., IEEE 1996
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3360-8
DOI :
10.1109/MCS.1996.506342
