DocumentCode :
1917007
Title :
Physical study of RTP N2O-and NH3-nitrided thin SiO2 films
Author :
Bouvet, D. ; Clivaz, P.A. ; Almeida, J. ; Coluzza, C. ; Margaritondo, G. ; Letourneau, P. ; Dutoit, M. ; Dubois, C. ; Dupuy, J.C. ; Pio, F.
Author_Institution :
Swiss Federal Institute of Technology, CH 1015 Lausanne, Switzerland
fYear :
1994
fDate :
11-15 Sept. 1994
Firstpage :
29
Lastpage :
32
Keywords :
Chemical analysis; Electric variables measurement; Energy resolution; Etching; Interface states; Microelectronics; Microscopy; Nitrogen; Rapid thermal processing; Research and development;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
Conference_Location :
Edinburgh, Scotland
Print_ISBN :
0863321579
Type :
conf
Filename :
5435662
Link To Document :
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