DocumentCode

1917016

Title

Deactivation Phenomenon for 0.18um Technology Indium Channel NMOS Devices

Author

Puchner, H. ; Aronowitz, S. ; Zubkov, V.

Author_Institution

LSI Logic Corporation, Santa Clara, USA

fYear

2000

fDate

11-13 September 2000

Firstpage

104

Lastpage

107

Keywords

Boron; CMOS technology; Doping; Impurities; Indium; MOS devices; MOSFETs; Nitrogen; Silicon; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2000. Proceeding of the 30th European

Print_ISBN

2-86332-248-6

Type

conf

DOI

10.1109/ESSDERC.2000.194725

Filename

1503655