Title :
Deactivation Phenomenon for 0.18um Technology Indium Channel NMOS Devices
Author :
Puchner, H. ; Aronowitz, S. ; Zubkov, V.
Author_Institution :
LSI Logic Corporation, Santa Clara, USA
fDate :
11-13 September 2000
Keywords :
Boron; CMOS technology; Doping; Impurities; Indium; MOS devices; MOSFETs; Nitrogen; Silicon; Threshold voltage;
Conference_Titel :
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN :
2-86332-248-6
DOI :
10.1109/ESSDERC.2000.194725
