DocumentCode :
1917032
Title :
Comparison of Low Thermal Budget ONO Bottom Oxides with Improved Data Retention Characteristics for Very High Density Flash Memory Products
Author :
Buisson, O.Roux dit ; Mondon, F. ; Guillaumot, B. ; Reimbold, G. ; Martin, F.
Author_Institution :
LETI (CEA Technologies Avancées) DMEL CEN/G, 85X, 38054 Grenoble Cedex 9 France.
fYear :
1994
fDate :
11-15 Sept. 1994
Firstpage :
33
Lastpage :
36
Abstract :
This paper discusses the data retention properties of ONO interpolysilicon dielectrics. Several low thermal budget recipes of bottom oxide are compared to improve FLASH E2PROM cells shrinkage toward 64 Mb generation. Best results are obtained for LPCVD bottom oxide against chlorinated and dry ones.
Keywords :
Dielectric devices; Dielectric loss measurement; Dielectric substrates; EPROM; Flash memory; Nonvolatile memory; Oxidation; Performance evaluation; Temperature; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
Conference_Location :
Edinburgh, Scotland
Print_ISBN :
0863321579
Type :
conf
Filename :
5435663
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1917032
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