DocumentCode
1917094
Title
Electrical Properties of Oxynitride Layers Obtained by Annealing of Nitrogen Doped Silicon
Author
Boyer, P.Temple ; Scheid, E. ; Olivie, F.
Author_Institution
LAAS - CNRS, 7 avenue du colonel Roche, 31077 TOULOUSE Cedex, FRANCE
fYear
1994
fDate
11-15 Sept. 1994
Firstpage
37
Lastpage
40
Abstract
A new method for the obtaining of thin oxynitride insulator is described: a nitrogen doped silicon layer is used as a nitrogen atoms source for the nitridation of a buried oxide layer. Capacitor structures are made and electrical characterization by C(V) and I(V) of the oxynitride films are presented and analysed.
Keywords
Annealing; Atomic layer deposition; Capacitors; Dielectrics and electrical insulation; Electric variables measurement; Kinetic theory; Nitrogen; Oxidation; Semiconductor films; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
Conference_Location
Edinburgh, Scotland
Print_ISBN
0863321579
Type
conf
Filename
5435664
Link To Document