• DocumentCode
    1917175
  • Title

    Narrow Device Issues in Deep-Submicron Technologies-the Influence of Stress, TED and Segregation on Device Performance

  • Author

    Nouri, Faran ; Scott, Gregory ; Rubin, Mark ; Manley, Martin ; Stolk, Peter

  • Author_Institution
    Philips Semiconductors, San Jose, CA, USA
  • fYear
    2000
  • fDate
    11-13 September 2000
  • Firstpage
    112
  • Lastpage
    115
  • Keywords
    Boron; Compressive stress; Etching; Isolation technology; Laboratories; Logic design; MOS devices; Oxidation; Semiconductor materials; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 2000. Proceeding of the 30th European
  • Print_ISBN
    2-86332-248-6
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2000.194727
  • Filename
    1503657
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1917175