Drain Bias Dependence of Gate Oxide Reliability in Conventional and Asymmetrical Channel MOSFETs in the Low Voltage Regime

Author

Anil, K.G. ; Mahapatra, S. ; Eisele, I. ; Rao, V. Ramgopal ; Vasi, J.

Author_Institution

Universit¨at der Bundeswehr M¨unchen, Neubiberg, Germany

fYear

2000

fDate

11-13 September 2000

Firstpage

124

Lastpage

127

Keywords

Current distribution; Dielectrics; Doping; Los Angeles Council; Low voltage; MOS capacitors; MOSFETs; Physics; Stress; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2000. Proceeding of the 30th European

Print_ISBN

2-86332-248-6

Type

DOI

10.1109/ESSDERC.2000.194730

Filename

1503660

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