Title :
Drain Bias Dependence of Gate Oxide Reliability in Conventional and Asymmetrical Channel MOSFETs in the Low Voltage Regime
Author :
Anil, K.G. ; Mahapatra, S. ; Eisele, I. ; Rao, V. Ramgopal ; Vasi, J.
Author_Institution :
Universit¨at der Bundeswehr M¨unchen, Neubiberg, Germany
fDate :
11-13 September 2000
Keywords :
Current distribution; Dielectrics; Doping; Los Angeles Council; Low voltage; MOS capacitors; MOSFETs; Physics; Stress; Temperature;
Conference_Titel :
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN :
2-86332-248-6
DOI :
10.1109/ESSDERC.2000.194730
