Title :
Impact of Gate Oxide Thickness Scaling on Hot-Carrier Degradation in Deep-sub-micron nMOSFETs
Author :
Anil, K.G. ; Pompl, T. ; Eisele, I.
Author_Institution :
Universit¨at der Bundeswehr M¨unchen, Neubiberg, Germany
fDate :
11-13 September 2000
Keywords :
Charge carrier processes; Degradation; Electrons; Hot carrier effects; Hot carriers; MOSFETs; Physics; Predictive models; Silicon; Voltage;
Conference_Titel :
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN :
2-86332-248-6
DOI :
10.1109/ESSDERC.2000.194732
