DocumentCode

1917332

Title

Impact of Gate Oxide Thickness Scaling on Hot-Carrier Degradation in Deep-sub-micron nMOSFETs

Author

Anil, K.G. ; Pompl, T. ; Eisele, I.

Author_Institution

Universit¨at der Bundeswehr M¨unchen, Neubiberg, Germany

fYear

2000

fDate

11-13 September 2000

Firstpage

132

Lastpage

135

Keywords

Charge carrier processes; Degradation; Electrons; Hot carrier effects; Hot carriers; MOSFETs; Physics; Predictive models; Silicon; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2000. Proceeding of the 30th European

Print_ISBN

2-86332-248-6

Type

conf

DOI

10.1109/ESSDERC.2000.194732

Filename

1503662