DocumentCode :
1917353
Title :
Accurate 2D Modelling of Titanium Salicide Process
Author :
Fornara, P. ; Poncet, A. ; Mathiot, D.
Author_Institution :
France Télécom - CNET-CNS - BP98 - F38240 Meylan
fYear :
1994
fDate :
11-15 Sept. 1994
Firstpage :
81
Lastpage :
84
Abstract :
The aim of this paper is to present the numerical simulation of the influence of the SALICIDE (self-aligned silicide) process on MOSFET (metal oxide semiconductor field effect transistor) technology. First, we report on the geometrical effects which appear during the growth of the titanium silicide (TiSi2) layer over Si-poly gate. Then, silicidation over boron doped source/drain shallow junctions is analysed. Finally the influence of point defect injection on dopant behavior during silicidation is presented.
Keywords :
Boron; Circuit simulation; MOSFET circuits; Semiconductor device modeling; Silicidation; Silicides; Silicon; Space technology; Titanium; Ultra large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
Conference_Location :
Edinburgh, Scotland
Print_ISBN :
0863321579
Type :
conf
Filename :
5435674
Link To Document :
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