• DocumentCode
    1917353
  • Title

    Accurate 2D Modelling of Titanium Salicide Process

  • Author

    Fornara, P. ; Poncet, A. ; Mathiot, D.

  • Author_Institution
    France Télécom - CNET-CNS - BP98 - F38240 Meylan
  • fYear
    1994
  • fDate
    11-15 Sept. 1994
  • Firstpage
    81
  • Lastpage
    84
  • Abstract
    The aim of this paper is to present the numerical simulation of the influence of the SALICIDE (self-aligned silicide) process on MOSFET (metal oxide semiconductor field effect transistor) technology. First, we report on the geometrical effects which appear during the growth of the titanium silicide (TiSi2) layer over Si-poly gate. Then, silicidation over boron doped source/drain shallow junctions is analysed. Finally the influence of point defect injection on dopant behavior during silicidation is presented.
  • Keywords
    Boron; Circuit simulation; MOSFET circuits; Semiconductor device modeling; Silicidation; Silicides; Silicon; Space technology; Titanium; Ultra large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
  • Conference_Location
    Edinburgh, Scotland
  • Print_ISBN
    0863321579
  • Type

    conf

  • Filename
    5435674
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1917353