Title :
Observation of a New Hole Gate Current Component in p(+)-poly Gate p-channel MOSFET´s
Author :
Driussi, F. ; Esseni, D. ; Selmi, L. ; Piazza, F.
Author_Institution :
University of Udine, Italy
fDate :
11-13 September 2000
Keywords :
Breakdown voltage; Charge carrier processes; Feedback; Hot carriers; Impact ionization; MOS devices; MOSFET circuits; Microelectronics; Physics; Substrate hot electron injection;
Conference_Titel :
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN :
2-86332-248-6
DOI :
10.1109/ESSDERC.2000.194733
