Variable gain amplifier building blocks based on MOSFET current dependence on the drain to source voltage

Author

Cracan, Arcadie ; Cojan, Nicolae

Author_Institution

Fac. of Electron., Telecommun. & IT, Gheorghe Asachi Tech. Univ., Iasi, Romania

fYear

2010

fDate

11-12 Nov. 2010

Firstpage

19

Lastpage

24

Abstract

This paper describes two variable gain amplifier building blocks which use MOSFETs operating in triode or saturation regions as basic transconductances. Employing two matched transistors that have all the terminals, except for the drain, connected together, one has the possibility of controlling the drain current using the drain voltage as a control. All the circuits were simulated using the austriamicrosystems 0.35um TDK made available within the Europractice project.

Keywords

MOS analogue integrated circuits; MOSFET; active networks; amplifiers; triodes; Europractice project; MOSFET; TDK; drain current control; drain voltage; matched transistor; saturation regions; size 0.35 mum; transconductance; triode; variable gain amplifier building block; DVD; Equations; Gain; Mathematical model; Mirrors; Transistors; Tuning; Gain control; MOS analog integrated circuits; MOS channel length modulation; MOS variable resistance; MOSFET circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics and Telecommunications (ISETC), 2010 9th International Symposium on

Conference_Location

Timisoara

Print_ISBN

978-1-4244-8457-7

Type

conf

DOI

10.1109/ISETC.2010.5679260

Filename

5679260