All-MOS Non-floating One-Port Linear Resistors for Spatio-Temporal Retinotopic Processing

Author

Shutinoski, Goce ; Dzhekov, Tomislav ; Gotchev, Gotcho

Author_Institution

Fac. of Electr. Eng., SSs Cyril & Methodius Univ., Skopje

Volume

2

fYear

2005

fDate

21-24 Nov. 2005

Firstpage

890

Lastpage

893

Abstract

The voltage mirroring technique implemented with MOS transistors that exhibits performance of nonfloating linear resistive element is presented. It comprises only three MOS transistors: two of them are enhancement type and the third is depletion type MOS transistor. The possibilities of controlling the variable resistance (tunability) are presented and simulation results are given. One substantial implementation of the circuit in all-MOS linear resistive grid for spatial retinotopic processing is outlined

Keywords

MOS integrated circuits; MOSFET; MOS transistor; all-MOS linear resistive grid; metal oxide semiconductor; nonfloating linear resistive element; nonfloating one-port linear resistor; spatial retinotopic processing; spatiotemporal retinotopic processing; variable resistance control; voltage mirroring technique; Circuit simulation; Information processing; Linearity; MOSFETs; Mirrors; Parasitic capacitance; Resistors; Transconductance; Very large scale integration; Voltage control; MOS VLSI; active resistors; non-floating resistive port; resistive grid;

fLanguage

English

Publisher

ieee

Conference_Titel

Computer as a Tool, 2005. EUROCON 2005.The International Conference on

Conference_Location

Belgrade

Print_ISBN

1-4244-0049-X

Type

conf

DOI

10.1109/EURCON.2005.1630088

Filename

1630088