Simple Formulae for the Effective Plus-Factor for Transient Enhanced Diffusion

Author

Hobler, G. ; Moroz, V.

Author_Institution

University of Technology Vienna, Austria

fYear

2000

fDate

11-13 September 2000

Firstpage

168

Lastpage

171

Keywords

Annealing; Implants; Ion implantation; Least squares methods; MOSFETs; Root mean square; Silicon; Transient analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2000. Proceeding of the 30th European

Print_ISBN

2-86332-248-6

Type

DOI

10.1109/ESSDERC.2000.194741

Filename

1503671

Link To Document