Title :
Post-Etch Cleaning after Dry Etching the Emitter Windows to Improve the Bipolar Characteristics in a 0.5μm BiCMOS Process
Author :
Decoutere, S. ; Vanhaelemeersch, S. ; Deferm, L. ; Vleugels, F. ; Vancuyck, G.
Author_Institution :
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
Abstract :
The opening of 0.5μm wide emitter windows in the base oxide to fabricate quasiselfaligned poly emitter bipolar transistors involves a dry oxide etching. This paper shows how appropriate post-etch cleaning substantially improves the base current characteristics and the emitter resistance of poly emitter bipolar transistors of a 0.5μm BiCMOS process.
Keywords :
BiCMOS integrated circuits; Contamination; Dry etching; Implants; Plasma applications; Plasma measurements; Pollution measurement; Silicon; Surface cleaning; Wet etching;
Conference_Titel :
Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
Conference_Location :
Edinburgh, Scotland
