DocumentCode

1917716

Title

High Frequency performance 0.1um gate-length Ge/Si

Author

Enciso, M. ; Aniel, F. ; Crozat, P. ; Adde, R. ; Höck, G. ; Hackbarth, T. ; König, U.

Author_Institution

Universite Paris-Sud, Orsay, France

fYear

2000

fDate

11-13 September 2000

Firstpage

184

Lastpage

187

Keywords

Equivalent circuits; FETs; Frequency; Germanium silicon alloys; HEMTs; Hafnium; MODFET circuits; Performance evaluation; Silicon germanium; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2000. Proceeding of the 30th European

Print_ISBN

2-86332-248-6

Type

conf

DOI

10.1109/ESSDERC.2000.194745

Filename

1503675