Title :
High Frequency performance 0.1um gate-length Ge/Si
Author :
Enciso, M. ; Aniel, F. ; Crozat, P. ; Adde, R. ; Höck, G. ; Hackbarth, T. ; König, U.
Author_Institution :
Universite Paris-Sud, Orsay, France
fDate :
11-13 September 2000
Keywords :
Equivalent circuits; FETs; Frequency; Germanium silicon alloys; HEMTs; Hafnium; MODFET circuits; Performance evaluation; Silicon germanium; Temperature;
Conference_Titel :
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN :
2-86332-248-6
DOI :
10.1109/ESSDERC.2000.194745
