Title :
High hole mobilities in fullly-strained Si/Si(1-x)Ge(x) (0.3 < x < 0.4) layers and their significance for SiGe pMOSFET performance
Author :
Lander, R.J.P. ; Ponomarev, Y.V. ; de Boer, W.B.
Author_Institution :
Philips Research Laboratories, Eindhoven, The Netherlands
fDate :
11-13 September 2000
Keywords :
Boron; Doping; Germanium silicon alloys; Hall effect; MOSFET circuits; Silicon germanium;
Conference_Titel :
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN :
2-86332-248-6
DOI :
10.1109/ESSDERC.2000.194746
