Mechanisms of Low Frequency Noise in P Channel MOSFETs

In this paper we examine mechanisms of low frequency noise in p channel silicon MOSFETs. In particular the difference in the magnitude of the noise exhibited by p and n channel transistors is investigated in relation to the McWhorter theory, based on trapping and emission of inversion layer charge by states in the gate oxide. New results are presented for noise level dispersion as a function of device geometry for p channel transistors. Furthermore, the dependence of the drain current noise in saturation is examined for p and n channel devices.