DocumentCode
1917796
Title
DRAM Cell with High Signal Charge and Small Storage Capacitance Using the Gain Concept
fYear
2000
fDate
11-13 September 2000
Firstpage
196
Lastpage
199
Keywords
CMOS process; CMOS technology; Design automation; Diodes; High K dielectric materials; MOS capacitors; MOSFETs; Parasitic capacitance; Random access memory; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN
2-86332-248-6
Type
conf
DOI
10.1109/ESSDERC.2000.194748
Filename
1503678
Link To Document