• DocumentCode
    1917800
  • Title

    An Efficient Channel Optimisation Method for 0.1 μm and Below MOSFET´s

  • Author

    Honoré, J-C ; Gautier, J.

  • Author_Institution
    LETI (CEA - Technologies Avancées), 17 rue des Martyrs, 38054 Grenoble Cedex 9, France.
  • fYear
    1994
  • fDate
    11-15 Sept. 1994
  • Firstpage
    155
  • Lastpage
    158
  • Abstract
    This paper reports on an efficient methodology to optimise conventional channel and Pulse Shaped Doping profile (PSD). We clarify the different physical phenomena responsible of leakage current increasing, then we compare and discuss the impact of the optimised profiles on device performances in term of current drivability, Drain Induced Barrier Lowering (DIBL), mobility and speed considerations.
  • Keywords
    Degradation; Doping profiles; Implants; Impurities; Leakage current; MOSFET circuits; Optimization methods; Pulse shaping methods; Space vector pulse width modulation; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
  • Conference_Location
    Edinburgh, Scotland
  • Print_ISBN
    0863321579
  • Type

    conf

  • Filename
    5435691
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1917800