DocumentCode
1917825
Title
Low Temperature Operation as a Tool to Investigate Second Order Effects in Submicron MOSFET´s
Author
Gutierrez D., Edmundo A. ; Deferm, Ludo
Author_Institution
Instituto Nacional de AstrofÃ\xadsica, Optica y Electrónica (INAOE), Integrated Circuits Design Group, P.O. Box 216 & 51, Z. P. 72000, Puebla, MÃ\x89XICO.
fYear
1994
fDate
11-15 Sept. 1994
Firstpage
159
Lastpage
163
Abstract
In this paper the electrical performance of submicron MOS transistors at low temperatures is explored. This way we found that second-order effects like; the bias dependent series resistance, the second substrate current hump and some others, are amplified allowing so an easier way to study them and to determine their physical origin.
Keywords
CMOS technology; Digital TV; Electric resistance; Helium; Integrated circuit synthesis; MOSFETs; Space technology; Surface resistance; Temperature; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
Conference_Location
Edinburgh, Scotland
Print_ISBN
0863321579
Type
conf
Filename
5435692
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