Capacitance Enhancement by Mesopore Formation for sub 100nm Deep Trench DRAM Technology

Author

Birner, A. ; Franosch, M. ; Goldbach, M. ; Lehmann, V. ; Schumann, D.

Author_Institution

Infineon Technologies, Dresden, Germany

fYear

2000

fDate

11-13 September 2000

Firstpage

200

Lastpage

203

Keywords

Capacitance; Capacitors; Charge carriers; Contacts; Etching; Mesoporous materials; Random access memory; Silicon; Thyristors; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2000. Proceeding of the 30th European

Print_ISBN

2-86332-248-6

Type

DOI

10.1109/ESSDERC.2000.194749

Filename

1503679

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