Title :
A 10 b 20-Msample/s 28 mW CMOS ADC in ASIC process
Author :
Wada, Atsushi ; Tani, Kuniyuki ; Matsushita, Yoshifumi ; Harada, Yasoo
Author_Institution :
Microelectron. Res. Centre, Sanyo Electr. Co. Ltd., Japan
Abstract :
We have developed a 20 Msample/s 10 b CMOS ADC with a 2.4 V power supply, in 0.35 μm 1-poly 2-Metal ASIC process without a special analog process, which is suitable for embedding in ASICs because of the small area (4.84 mm2) and small power consumption. To realize this ADC we have developed a 2-step interstage amplifying pipeline system and new circuit technologies for residue amplifiers. The prototype chip was fabricated and was measured. It shows good linearity of less than ±1 LSB and 28 mW power consumption with 2.4 V at 20 MHz sampling
Keywords :
CMOS integrated circuits; analogue-digital conversion; application specific integrated circuits; low-power electronics; 0.35 micron; 10 bit; 2.4 V; 20 MHz; 28 mW; ADC; ASIC process; CMOS; embedding; interstage amplifying pipeline system; linearity; power consumption; residue amplifiers; Application specific integrated circuits; Bandwidth; CMOS process; CMOS technology; Capacitance; Energy consumption; Linearity; Low voltage; Microelectronics; Pipelines;
Conference_Titel :
ASIC Conference 1998. Proceedings. Eleventh Annual IEEE International
Conference_Location :
Rochester, NY
Print_ISBN :
0-7803-4980-6
DOI :
10.1109/ASIC.1998.722803
