DocumentCode
1917930
Title
Indication of Non-equilibrium Transport in SiGe p-MOSFETs
Author
Zhao, Y.P. ; Kaya, S. ; Watling, J.R. ; Asenov, A. ; Barker, J.R. ; Palmer, M. ; Braithwaite, G. ; Whall, T.E. ; Parker, E.H.C. ; Waite, A. ; Evans, A.G.R.
Author_Institution
The University of Glasgow, UK
fYear
2000
fDate
11-13 September 2000
Firstpage
224
Lastpage
227
Keywords
Analytical models; Computer science; Energy measurement; Germanium silicon alloys; Information analysis; Length measurement; MOSFET circuits; Physics; Semiconductor device modeling; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN
2-86332-248-6
Type
conf
DOI
10.1109/ESSDERC.2000.194755
Filename
1503685
Link To Document