DocumentCode :
1917930
Title :
Indication of Non-equilibrium Transport in SiGe p-MOSFETs
Author :
Zhao, Y.P. ; Kaya, S. ; Watling, J.R. ; Asenov, A. ; Barker, J.R. ; Palmer, M. ; Braithwaite, G. ; Whall, T.E. ; Parker, E.H.C. ; Waite, A. ; Evans, A.G.R.
Author_Institution :
The University of Glasgow, UK
fYear :
2000
fDate :
11-13 September 2000
Firstpage :
224
Lastpage :
227
Keywords :
Analytical models; Computer science; Energy measurement; Germanium silicon alloys; Information analysis; Length measurement; MOSFET circuits; Physics; Semiconductor device modeling; Silicon germanium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN :
2-86332-248-6
Type :
conf
DOI :
10.1109/ESSDERC.2000.194755
Filename :
1503685
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1917930
