• DocumentCode
    1917931
  • Title

    A Physics-Based, Accurate Spice Model of Impact-Ionization Effects in Bipolar Transistors

  • Author

    Zanoni, E. ; Fabbro, A.Dal ; Vendrame, L. ; Verzellesi, G. ; Meneghesso, G. ; Pavan, P. ; Chantre, A.

  • Author_Institution
    Dipartimento di Elettronica e Informatica, Universita di Padova, Via Gradenigo 6/A, I-35131 Padova, Italy, Tel. +39-49-8287664, Fax +39-49-8287699
  • fYear
    1994
  • fDate
    11-15 Sept. 1994
  • Firstpage
    181
  • Lastpage
    184
  • Abstract
    A new SPICE model of the bipolar transistor including avalanche multiplication and current crowding effects is described. Impact-ionization phenomena are modelled refering to a physical description of impact-ionization coefficients, rather than to semi-empirical laws, as in previous models. We show that an accurate analysis of multiplication effects can be obtained only if the influence of impact-ionization on current crowding and parasitic base resistance RB is included in the model and described exactly. The model also allows one to easily include high injection effects, which are important for the evaluation of breakdown voltage at high IE.
  • Keywords
    Bipolar transistors; Circuit testing; Current density; Electron mobility; Equivalent circuits; Fitting; Impact ionization; Proximity effect; SPICE; Semiconductor process modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
  • Conference_Location
    Edinburgh, Scotland
  • Print_ISBN
    0863321579
  • Type

    conf

  • Filename
    5435697
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1917931