Title :
A High Performance 0.4μm BiCMOS Technology for 16Mb Fast SRAMs
Author :
Yamazaki, T. ; Suzuki, H. ; Yoshida, H. ; Nakamura, K. ; Kuhara, S. ; Kimura, T. ; Takada, M.
Author_Institution :
ULSI Device Development Labs. and NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229, Japan.
Abstract :
A high performance 0.4μm BiCMOS technology has been developed for fast 16Mb SRAMs. This technology includes a newly developed WIPEC(widely implanted pedestal collector) bipolar transistor. WIPEC can effectively prevent a 2D Kirk effect with minimizing the increase in base-collector junction capacitance. An address access time of 7ns was achieved for a 16Mb BiCMOS SRAM fabricated by using this technology.
Keywords :
BiCMOS integrated circuits; Bipolar transistors; Capacitance; Cutoff frequency; Isolation technology; Kirk field collapse effect; Low voltage; MOSFETs; Random access memory; Thin film transistors;
Conference_Titel :
Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
Conference_Location :
Edinburgh, Scotland
