Title :
Research of Switching Devices with Optical-Electronic Management
Author :
Kobak, N.N. ; Slesarenko, S.S.
Author_Institution :
Nat. Tech. Univ. of Ukraine, Kyiv
Abstract :
Experimental researches of microwave switch optical management are conducted on the basis of GaAs field transistor with Shotki barrier (FET) for application in multifunction information systems. Efficient level of optical signal which has allowed to obtain decoupling value more than 20 db in switching element on FET at 2 Ghz has been determined. In this connection power level of visual signal was about 1 mW. The results obtained prove availability of using GaAs FET as the basic element in switching systems with optic-electron management.
Keywords :
III-V semiconductors; Schottky barriers; field effect transistors; gallium arsenide; microwave photonics; optical couplers; optical switches; GaAs; Schottky barrier; field transistor; frequency 2 GHz; microwave switch optical management; multifunction information systems application; optical signal power; optical-electronic management; switching devices; switching time; Gallium arsenide; Microwave FETs; Microwave devices; Optical devices;
Conference_Titel :
Microwave & Telecommunication Technology, 2007. CriMiCo 2007. 17th International Crimean Conference
Conference_Location :
Crimea
Print_ISBN :
978-966-335-012-7
DOI :
10.1109/CRMICO.2007.4368785
